Power, reliability and security challenges in advanced CMOS and beyond-CMOS devices and circuits

The Internet of Things (IoT) is now widely recognized as the next step of disruptive digital innovation. With IoT, any physical and virtual object can become connected to other objects and to the internet, creating a fabric of connectivity between things and between humans and things.However, the development of IoT in the near future faces a lot of technological challenges that need to be addressed, such as power/energy efficiency, reliability, security, and cost. Advanced CMOS technologies are potential candidates for solutions in the short term to those challenges, whereas beyond-CMOS devices are the answer for solutions in the long term. Low voltage operation to reduce power consumption leads, among other effects, to an increase in the impact of variations, including process (also known as Time Zero Variations, TZV) and time-dependent variations (TDV). Overcoming the variability challenge is a formidable effort requiring a synergistic approach, combining methods at all abstraction levels of the manufacturing process, covering from the technology/device levels up to the circuit and system/application levels.
Furthermore, whereas in some cases variability will be object of struggle, prevention andmitigation, it can also be a powerful ally to reach the longed-for system security. This project progresses in this direction through the development of design strategies for low-power variability-aware and secure circuits based on state-of-the-art CMOS and emerging beyond- CMOS technologies. This main objective will be approached from different perspectives and at different depths, depending on the degree of maturity of the devices and technologies. The first perspective is the characterization and modelling of TDV phenomena in advanced CMOS technologies, with special emphasis on the combined effect of Bias Temperature Instability (BTI) and Hot Carrier Injection (HCI) and on the impact of Random Telegraph Noise (RTN) for low voltage operation. Additionally, time-zero variability (TZV) models for beyond-CMOS devices such as steep-slope devices, suitable for low-voltage operation, will be obtained. Second, the impact of variability in low power circuits will be analyzed using the models previously developed. Moreover, variability-aware design techniques will be exploited to study how far the impact of all considered effects can be mitigated in advanced CMOS and beyond-CMOS circuits Finally, variability (TZV and RTN) will be considered as an effect that can be exploited for the design of secure cryptographic primitives such as PUFs and TRNGs. In this sense, the implementation of TRNGs based on phase transition devices (PTD) based nano-oscillators will be explored. Also, since distinctive features of beyond-CMOS devices are suitable for the implementation of efficient cryptographic circuits, the design of Differential Power Analysis (DPA)-resilient cryptographic circuits using TFETs will be addressed.


Principal Investigator

Juan Núñez Martínez  >

Project Details

  • Type: Research project
  • Funding Body: Junta de Andalucía
  • Reference: US-1380876
  • Start date: 01/01/2022
  • End date: 31/12/2022
  • Funding: 100.000,00 €