Publicaciones del IMSE

Encontrados resultados para:

Autor: Pablo Sarazá Canflanca
Año: Desde 2002

Artículos de revistas


Unified RTN and BTI statistical compact modeling from a defect-centric perspective
G. Pedreira, J. Martin-Martinez, P. Saraza-Canflanca, R. Castro-Lopez, R. Rodriguez, E. Roca, F.V. Fernandez and M. Nafria
Journal Paper · Solid-State Electronics, vol. 185, article 108112, 2021
resumen      doi      pdf

In nowadays deeply scaled CMOS technologies, time-dependent variability effects have become important concerns for analog and digital circuit design. Transistor parameter shifts caused by Bias Temperature Instability and Random Telegraph Noise phenomena can lead to deviations of the circuit performance or even to its fatal failure. In this scenario extensive and accurate device characterization under several test conditions has become an unavoidable step towards trustworthy implementing the stochastic reliability models. In this paper, the statistical distributions of threshold voltage shifts in nanometric CMOS transistors will be studied at near threshold, nominal and accelerated aging conditions. Statistical modelling of RTN and BTI combined effects covering the full voltage range is presented. The results of this work suppose a complete modelling approach of BTI and RTN that can be applied in a wide range of voltages for reliability predictions.

Statistical Characterization of Time-Dependent Variability Defects using the Maximum Current Fluctuation
P. Saraza-Canflanca, J. Martin-Martinez, R. Castro-Lopez, E. Roca, R. Rodriguez, F.V. Fernandez and M. Nafria
Journal Paper · IEEE Transactions on Electron Devices, first online, 2021
resumen      doi      pdf

This article presents a new methodology to extract, at a given operation condition, the statistical distribution of the number of active defects that contribute to the observed device time-dependent variability, as well as their amplitude distribution. Unlike traditional approaches based on complex and time-consuming individual analysis of thousands of current traces, the proposed approach uses a simpler trace processing, since only the maximum and minimum values of the drain current during a given time interval are needed. Moreover, this extraction method can also estimate defects causing small current shifts, which can be very complex to identify by traditional means. Experimental data in a wide range of gate voltages, from near-threshold up to nominal operation conditions, are analyzed with the proposed methodology.

Statistical threshold voltage shifts caused by BTI and HCI at nominal and accelerated conditions
J. Diaz-Fortuny, P. Saraza-Canflanca, R. Rodriguez, J. Martin-Martinez, R. Castro-Lopez, E. Roca, F.V.Fernandez and M. Nafria
Journal Paper · Solid-State Electronics, vol. 185, article 108037, 2021
resumen      doi      pdf

In nowadays deeply scaled CMOS technologies, time-zero and time-dependent variability effects have become important concerns for analog and digital circuit design. For instance, transistor parameter shifts caused by Bias Temperature Instability and Hot-Carrier Injection phenomena can lead to progressive deviations of the circuit performance or even to its catastrophic failure. In this scenario, and to understand the effects of these variability sources, an extensive and accurate device characterization under several test conditions has become an unavoidable step towards trustworthy implementing the stochastic reliability models and simulation tools needed to achieve reliable integrated circuits. In this paper, the statistical distributions of threshold voltage shifts in nanometric CMOS transistors will be studied at nominal and accelerated aging conditions. To this end, a versatile transistor array chip and a flexible measurement setup have been used to reduce the required testing time to attainable values.

Improving the reliability of SRAM-based PUFs under varying operation conditions and aging degradation
P. Saraza-Canflanca, H. Carrasco-Lopez, A. Santana-Andreo, P. Brox, R. Castro-Lopez, E. Roca and F.V. Fernandez
Journal Paper · Microelectronics Reliability, vol 118, article 114049, 2021
resumen      doi      pdf

The utilization of power-up values in SRAM cells to generate PUF responses for chip identification is a subject of intense study. The cells used for this purpose must be stable, i.e., the cell should always power-up to the same value (either ‘0’ or ‘1’). Otherwise, they would not be suitable for the identification. Some methods have been presented that aim at increasing the reliability of SRAM PUFs by identifying the strongest cells, i.e., the cells that more consistently power-up to the same value. However, these methods present some drawbacks, in terms of either their practical realization or their actual effectiveness in selecting the strongest cells at different scenarios, such as temperature variations or when the circuits have suffered aging-related degradation. In this work, the experimental results obtained for a new method to classify the cells according to their power-up strength are presented and discussed. The method overcomes some of the drawbacks in previously reported methods. In particular, it is experimentally demonstrated that the technique presented in this work outstands in selecting SRAM cells that are very robust against circuit degradation and temperature variations, which ultimately translates into the construction of reliable SRAM-based PUFs.

A robust and automated methodology for the analysis of Time-Dependent Variability at transistor level
P. Saraza-Canflanca, J. Diaz-Fortuny, R. Castro-Lopez, E. Roca, J. Martin-Martinez, R. Rodriguez, M. Nafria and F.V. Fernandez
Journal Paper · Integration, vol. 72, pp 13-20, 2020
resumen      doi      pdf

In the past few years, Time-Dependent Variability has become a subject of growing concern in CMOS technologies. In particular, phenomena such as Bias Temperature Instability, Hot-Carrier Injection and Random Telegraph Noise can largely affect circuit reliability. It becomes therefore imperative to develop reliability-aware design tools to mitigate their impact on circuits. To this end, these phenomena must be first accurately characterized and modeled. And, since all these phenomena reveal a stochastic nature for deeply-scaled integration technologies, they must be characterized massively on devices to extract the probability distribution functions associated to their characteristic parameters. In this work, a complete methodology to characterize these phenomena experimentally, and then extract the necessary parameters to construct a Time-Dependent Variability model, is presented. This model can be used by a reliability simulator.

Flexible Setup for the Measurement of CMOS Time-Dependent Variability with Array-Based Integrated Circuits
J. Diaz-Fortuny, P. Saraza-Canflanca, R. Castro-Lopez, E. Roca, J. Martin-Martinez, R. Rodriguez, F.V. Fernandez and M. Nafria
Journal Paper · IEEE Transactions on Instrumentation and Measurement, vol. 69, no. 2, pp 853-864, 2020
resumen      doi      pdf

This paper presents an innovative and automated measurement setup for the characterization of variability effects in CMOS transistors using array-based integrated circuits (ICs), through which a better understanding of CMOS reliability could be attained. This setup addresses the issues that come with the need for a trustworthy statistical characterization of these effects: testing a very large number of devices accurately but, also, in a timely manner. The setup consists of software and hardware components that provide a user-friendly interface to perform the statistical characterization of CMOS transistors. Five different electrical tests, comprehending time-zero and time-dependent variability effects, can be carried out. Test preparation is, with the described setup, reduced to a few seconds. Moreover, smart parallelization techniques allow reducing the typically time-consuming aging characterization from months to days or even hours. The scope of this paper thus encompasses the methodology and practice of measurement of CMOS time-dependent variability, as well as the development of appropriate measurement systems and components used in efficiently generating and acquiring the necessary electrical signals.

A detailed study of the gate/drain voltage dependence of RTN in bulk pMOS transistors
P. Saraza-Canflanca, J. Martin-Martinez, R. Castro-Lopez, E. Roca, R. Rodriguez, M. Nafria and F.V. Fernandez
Journal Paper · Microelectronic Engineering, vol. 215, article 111004, 2019
resumen      doi      pdf

Random Telegraph Noise (RTN) has attracted increasing interest in the last years. This phenomenon introduces variability in the electrical properties of transistors, in particular in deeply-scaled CMOS technologies, which can cause performance degradation in circuits. In this work, the dependence of RTN parameters, namely current jump amplitude and emission and capture time constants, on the bias conditions, both VG and VD, has been studied on a set of devices, with a high granularity in a broad voltage range. The results obtained for the VG dependences corroborate previous works, but suggest a unique trend for all the devices in a VG range that goes from the near-threshold region up to voltages over the nominal operation bias. However, different trends have been observed in the parameters dependence for the case of VD. From the experimental data, the probabilities of occupation of the associated defects have been evaluated, pointing out large device-to-device dispersion in the VD dependences.

Congresos


Circuit reliability prediction: challenges and solutions for the device time-dependent variability characterization roadblock
M. Nafria, J. Diaz-Fortuny, P. Saraza-Canflanca, J. Martin-Martinez, E. Roca, R. Castro-Lopez, R. Rodriguez, P. Martin-Lloret, A. Toro-Frias, D. Mateo, E. Barajas, X. Aragones and F.V. Fernandez
Conference · IEEE Latin America Electron Devices Conference LAEDC 2021
resumen     

The characterization of the MOSFET Time-Dependent Variability (TDV) can be a showstopper for reliability-aware circuit design in advanced CMOS nodes. In this work, a complete MOSFET characterization flow is presented, in the context of a physics-based TDV compact model, that addresses the main TDV characterization challenges for accurate circuit reliability prediction at design time. The pillars of this approach are described and illustrated through examples.

Improving the reliability of SRAM-based PUFs under varying conditions
P. Sarazá-Canflanca, H. Carrasco-López, P. Brox, R. Castro-López, E. Roca and F.V. Fernández
Conference · Conference on Design of Circuits and Integrated Systems DCIS 2020
resumen     

Abstract not available

Improving the reliability of SRAM-based PUFs in the presence of aging
P. Saraza-Canflanca, H. Carrasco-Lopez, P. Brox, R. Castro-Lopez, E. Roca and F.V. Fernandez
Conference · Design and Technology of Integrated Systems in Nanoscale Era DTIS 2020
resumen     

The utilization of power-up values in SRAM cells for the generation of PUF responses has been widely studied. It is important that the cells used for this purpose are stable, i.e., the cells must have a strong tendency towards one of the two possible values (‘ ‘0 ’ or ‘1 ’). Some methods have been presented that aim at increasing the reliability of this type of PUFs by selecting the strongest cells among a set of them. However, they feature some drawbacks, either in terms of their practical feasibility or of their actual effectiveness selecting the strongest cells in different scenarios. In this work, the experimental results obtained for a new method to classify the cells according to their strength are presented and discussed. The technique overcomes some of the drawbacks that the previous methods present. In particular, it is experimentally demonstrated that the technique presented in this work outstands in selecting SRAM cells that are very robust against circuit degradation, which translates into the construction of reliable SRAM-based PUFs.

TiDeVa: A Toolbox for the Automated and Robust Analysis of Time-Dependent Variability at Transistor Level
P. Saraza-Canflanca, J. Diaz-Fortuny, R. Castro-Lopez, E. Roca, J. Martin-Martinez, R. Rodriguez, M. Nafria and F.V.Fernandez
Conference · Int. Conf. on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design SMACD 2019
resumen     

Time-Dependent Variability has attracted increasing interest in the last years. In particular, phenomena such as Bias Temperature Instability, Hot Carrier Injection and Random Telegraph Noise can have a large impact on circuit reliability, and must be therefore characterized and modeled. For technologies in the nanometer range, these phenomena reveal a stochastic behavior and must be characterized in a massive manner, with enormous amounts of data being generated in each measurement. In this work, a novel tool with a user-friendly interface, which allows the robust and fullyautomated parameter extraction for RTN, BTI and HCI experiments, is presented.

Generation of Lifetime-Aware Pareto-Optimal Fronts Using a Stochastic Reliability Simulator
A. Toro-Frias, P. Saraza-Canflanca, F. Passos, P. Martin-Lloret, R. Castro-Lopez, E. Roca, J. Martin-Martinez, R. Rodriguez, M. Nafria and F.V. Fernandez
Conference · Design Automation and Test in Europe DATE 2019
resumen     

Process variability and time-dependent variability have become major concerns in deeply-scaled technologies. Two of the most important time-dependent variability phenomena are Bias Temperature Instability (BTI) and Hot-Carrier Injection (HCI), which can critically shorten the lifetime of circuits. Both BTI and HCI reveal a discrete and stochastic behavior in the nanometer scale, and, while process variability has been extensively treated, there is a lack of design methodologies that address the joint impact of these two phenomena on circuits. In this work, an automated and timeefficient design methodology that takes into account both process and time-dependent variability is presented. This methodology is based on the utilization of lifetime-aware Pareto-Optimal Fronts (POFs). The POFs are generated with a multi-objective optimization algorithm linked to a stochastic simulator. Both the optimization algorithm and the simulator have been specifically tailored to reduce the computational cost of the accurate evaluation of the impact on a circuit of both sources of variability.

New method for the automated massive characterization of Bias Temperature Instability in CMOS transistors
P. Saraza-Canflanca, J. Diaz-Fortuny, R. Castro-Lopez, E. Roca, J. Martin-Martinez, R. Rodriguez, M. Nafria, F.V. Fernandez
Conference · Design Automation and Test in Europe DATE 2019
resumen     

Bias Temperature Instability has become a critical issue for circuit reliability. This phenomenon has been found to have a stochastic and discrete nature in nanometerscale CMOS technologies. To account for this random nature, massive experimental characterization is necessary so that the extracted model parameters are accurate enough. However, there is a lack of automated analysis tools for the extraction of the BTI parameters from the extensive amount of generated data in those massive characterization tests. In this paper, a novel algorithm that allows the precise and fully automated parameter extraction from experimental BTI recovery current traces is presented. This algorithm is based on the Maximum Likelihood Estimation principles, and is able to extract, in a robust and exact manner, the threshold voltage shifts and emission times associated to oxide trap emissions during BTI recovery, required to properly model the phenomenon.

A new time efficient methodology for the massive characterization of RTN in CMOS devices
G. Pedreira, J. Martin-Martinez, J. Diaz-Fortuny, P. Saraza-Canflanca, R. Rodriguez, R. Castro-Lopez, E. Roca, F.V. Fernandez and M. Nafria
Conference · IEEE International Reliability Physics Symposium IRPS 2019
resumen     

Abstract not avaliable

Design considerations of an SRAM array for the statistical validation of time-dependent variability models
P. Saraza-Canflanca, D. Malagon, F. Passos, A. Toro, J. Nuñez, J. Diaz-Fortuny, R. Castro-Lopez, E. Roca, J. Martin-Martinez, R. Rodriguez, M. Nafria and F.V. Fernandez
Conference · Int. Conf. on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design SMACD 2018
resumen     

Modeling and characterization of time-dependent variability phenomena as well as the simulation of their impact on circuit operation have attracted considerable efforts. This paper digs into the validation of compact models and simulation tools in the real operation of circuits. One of the most popular blocks, the 6T SRAM, is proposed for this purpose and a test chip containing an SRAM array is designed. The array allows individual access to each SRAM cell, the application of accelerated aging tests as well as the characterization of common performance metrics.

A Model Parameter Extraction Methodology Including Time-dependent Variability for Circuit Reliability Simulation
J. Diaz-Fortuny, P. Saraza-Canflanca, A. Toro-Frias, R. Castro-Lopez, J. Martin-Martinez, E. Roca, R. Rodriguez, F.V. Fernandez and M. Nafria
Conference · Int. Conf. on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design SMACD 2018
resumen     

In current CMOS advanced technology nodes, accurate extraction of transistor parameters affected by timedependent variability, like threshold voltage (Vth) and mobility (μ), has become a critical issue for both analog and digital circuit simulation. In this work, a precise VTH0 and U0 BSIM parameters extraction methodology is presented, together with a straightforward IDS to VTH0 shift conversion, to allow the complete study of aging device effects for reliability circuit

Automated massive RTN characterization using a transistor array chip
P. Saraza-Canflanca, J. Diaz-Fortuny, A. Toro-Frias, R. Castro-Lopez, E. Roca, J. Martin-Martinez, R. Rodriguez, M. Nafria and F.V. Fernandez
Conference · Int. Conf. on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design SMACD 2018
resumen     

In this work, a CMOS transistor array for the massive measurement of random telegraph noise (RTN), together with a dedicated experimental setup, is presented. The array chip, called ENDURANCE, allows the massive characterization of the RTN parameters needed for a complete understanding of the phenomenon. Additionally, some experimental results are presented that demonstrate the convenience of the setup.

Libros


No hay resultados

Capítulos de libros


Modeling of variability and reliability in analog circuits
J. Martin-Martinez, J. Diaz-Fortuny, A. Toro-Frias, P. Martin-Lloret, P. Saraza-Canflanca, R. Castro-Lopez, R. Rodriguez, E. Roca, F.V. Fernandez and M. Nafria
Book Chapter · Modelling Methodologies in Analogue Integrated Circuit Design, pp 179-206, 2020
resumen      doi      

This chapter is divided into four sections. In Section 8.1, the probabilistic defect occupancy (PDO) model, a physics-based compact model, is introduced, which can be easily implemented into circuit simulators. Section 8.2 describes a purposely designed IC which contains suitable test structures, together with a full instrumentation system for the massive characterization of TZV and TDV in CMOS transistors, from which aging of the technology under study can be statistically evaluated. Section 8.3 is devoted to a smart methodology, which allows extracting the statistical distributions of the main physical parameters related to TDV from the measurements performed with the instrumentation system. Finally, Section 8.4 describes CASE, a new reliability simulation tool that accounts for TZV and TDV in analog circuits, covering important aspects, such as the device degradation evaluation, by means of stochastic modeling and the link between the device biasing and its degradation. As an example, the shifts of the performance of a Miller operational amplifier related to the device TDV is evaluated using CASE. Finally, in Section 8.5 the main conclusions are summarized.

Otras publicaciones


No hay resultados

  • Revistas516
  • Congresos1076
  • Libros26
  • Capítulos de libros81
  • Otros9
  • 202140
  • 2020100
  • 201977
  • 2018106
  • 2017111
  • 2016104
  • 2015111
  • 2014104
  • 201380
  • 2012108
  • 2011102
  • 2010120
  • 200977
  • 200867
  • 200770
  • 200665
  • 200578
  • 200468
  • 200362
  • 200258
INVESTIGACIÓN
COMPARTIR